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Evaluation of defect ratio in TiN film made by plasma CVD by CPCD method

机译:用CPCD方法评估等离子CVD制备的TiN膜中的缺陷率

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摘要

Corrosion resistance of coated TiN film is governed by pinhole defect. Therefore, it is necessary to evaluate the existing state of defects. The Critical Passivation Current Density (CPCD) method had some problems though this method could quantitatively estimate defects as a pinhole defect ratio (%). The most important problem is the overestimation in defect ratio evaluation in the cases when large corrosion pits were generated and some parts of TiN films were exfoliated due to its low adhesion strength and high residual stress. Therefore in this study, the adhesion characteristics of TiN films which was coated by plasma CVD was investigated by the scratch test. The applicable range of the CPCD test was made clear for the defect ratio evaluation of TiN films with various film thickness and adhesion strength. And then, some improvements of CPCD test for avoiding the overestimation of defect in film are discussed.
机译:涂层TiN膜的耐蚀性受针孔缺陷的影响。因此,有必要评估缺陷的现有状态。临界钝化电流密度(CPCD)方法存在一些问题,尽管该方法可以定量地将缺陷估计为针孔缺陷率(%)。最重要的问题是,由于腐蚀强度低和残余应力高,在产生大量腐蚀点并且部分TiN膜剥落的情况下,对缺陷率评估的高估。因此,在本研究中,通过刮擦试验研究了通过等离子体CVD涂覆的TiN膜的粘附特性。明确了CPCD试验的适用范围,以评估各种膜厚和粘附强度的TiN膜的缺陷率。然后,讨论了CPCD测试的一些改进措施,以避免对胶片缺陷的过高估计。

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