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Electronic Structure and Thermoelectric Properties of Na and Ni-doped Ca_3Co_2O_6

机译:Na和Ni掺杂的Ca_3Co_2O_6的电子结构和热电性能

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摘要

The electronic structures of Ca_3Co_2O_6, Na and Ni doped models were studied by the quantum chemical software of Camhride Serial Total Energy Package (CASTEP) that is based, on density function theory (DFT) and pseudo-potential. The electronic conductivity, seebeck coefficient, thermal conductivity and figure of merit ( Z) were computed. The energy band structure reveals the form of the impurity levels due to the substitu-tional impurity in semiconductors. Na-doped model shoivs the character of p-type semiconductor, but Ni-doped model is n-type semiconductor. The calculation results show that the electric conductivity of the doped model is higher than that of the non- doped model, while the Seebeck coefficient and thermal conductivity of the doped model are lower than those of the non-doped one. Because of the great increase of the, electric conductivity, Z of Na-doped model is enhanced and thermoelectric properties are improved. On the other hand, as the large decline of Seebeck coefficient, Z of Ni- doped model is less than that of the non- doped model.
机译:通过基于密度泛函理论(DFT)和伪势能的Camhride串行总能封装(CASTEP)的量子化学软件研究了Ca_3Co_2O_6,Na和Ni掺杂模型的电子结构。计算出电子传导率,塞贝克系数,热传导率和品质因数(Z)。能带结构揭示了由于半导体中的取代杂质而导致的杂质能级的形式。 Na掺杂模型显示出p型半导体的特性,而Ni掺杂模型则是n型半导体。计算结果表明,掺杂模型的电导率高于未掺杂模型的电导率,而塞贝克系数和热导率低于未掺杂模型的塞贝克系数和导热率。由于电导率的极大提高,Na掺杂模型的Z得以增强,热电性能得到改善。另一方面,由于塞贝克系数的大幅下降,Ni掺杂模型的Z值小于非掺杂模型的Z值。

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