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首页> 外文期刊>Journal of the Physical Society of Japan >Spatial distribution of the B-site inhomogeneity in an as-grown Pb(In1/2Nb1/2)O-3 single crystal studied by a complementary use of X-ray and neutron scatterings
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Spatial distribution of the B-site inhomogeneity in an as-grown Pb(In1/2Nb1/2)O-3 single crystal studied by a complementary use of X-ray and neutron scatterings

机译:通过互补使用X射线和中子散射研究了已生长的Pb(In1 / 2Nb1 / 2)O-3单晶中B位不均匀性的空间分布

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摘要

Structural properties of as-grown Pb(In1/2Nb1/2)O-3 (PIN) single crystals at room temperature (RT) were investigated by x-ray and neutron scattering techniques, taking Much account of the difference in the penetration depth and spatial resolution of x-rays and those of neutrons. A strong diffuse scattering was observed by x-ray while h/4k/40 superlattice reflections were found by neutron, indicating a relaxer state in the outer-layer of the crystal and an antiferroelectric (AFE) state in the bulk. The phonon dispersion was measured for the first time for the PIN series. Two transverse optic (TO1 and TO2) modes were clarified near the zone center though neither water-fall behavior nor folding of phonon branches was confirmed. We have thus concluded that a major part of the as-grown PIN crystal at RT is ferroelectric (FE). These results imply that the B-site chemical ordering, i.e., inhomogeneity, which controls the structural properties of PIN, is unevenly distributed throughout the crystal. We speculate that small AFE grains coexist with the FE matrix while the outer-layer is in a relaxor state in the as-grown PIN.
机译:利用X射线和中子散射技术研究了Pb(In1 / 2Nb1 / 2)O-3(PIN)生长的Pb(In1 / 2Nb1 / 2)O-3(PIN)单晶在室温下的结构特性,同时充分考虑了穿透深度和X射线和中子的空间分辨率。 X射线观察到强烈的漫散射,而中子观察到h / 4k / 40超晶格反射,表明晶体外层为弛豫态,体中为反铁电(AFE)态。首次测量了PIN系列的声子色散。在区域中心附近阐明了两种横向光学模式(TO1和TO2),尽管未确认有水流行为或声子分支折叠。因此,我们得出的结论是,在室温下生长的PIN晶体的主要部分是铁电(FE)。这些结果表明,控制PIN的结构特性的B位化学有序,即不均匀性,在整个晶体中分布不均匀。我们推测,小AFE晶粒与FE基体共存,而外层在所生长的PIN中处于弛豫状态。

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