首页> 美国卫生研究院文献>Applied Physics Letters >A complete set of material properties of single domain 0.26Pb(In1∕2Nb1∕2)O3–0.46Pb(Mg1∕3Nb2∕3)O3–0.28PbTiO3 single crystals
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A complete set of material properties of single domain 0.26Pb(In1∕2Nb1∕2)O3–0.46Pb(Mg1∕3Nb2∕3)O3–0.28PbTiO3 single crystals

机译:单畴0.26Pb(In1 ∕ 2Nb1 ∕ 2)O3-0.46Pb(Mg1 ∕ 3Nb2 ∕ 3)O3-0.28PbTiO3单晶的材料性质的完整集合

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摘要

Pb(In1∕2Nb1∕2)O3–Pb(Mg1∕3Nb2∕3)O3–PbTiO3 (PIN-PMN-PT) single crystals have been developed recently, which can increase the operating temperature by at least 20 °C compared to PMN-PT crystals. We have measured a complete set of material properties of single domain PIN-PMN-PT crystal, which is urgently needed in theoretical studies and electromechanical device designs using this crystal. Because the rotated values of d33*=1122pCN and k33*=89% along [001]c calculated using the single domain data obtained here are in good agreement with the [001]c poled multidomain PIN-PMN-PT crystals, one may conclude that the physical origin of the ultrahigh piezoelectric properties mainly come from orientation effect.
机译:最近开发了Pb(In1 ∕ 2Nb1 ∕ 2)O3-Pb(Mg1 ∕ 3Nb2 ∕ 3)O3-PbTiO3(PIN-PMN-PT)单晶,与PMN相比,其可将工作温度提高至少20°C。 -PT晶体。我们已经测量了单域PIN-PMN-PT晶体的整套材料性能,这在使用该晶体的理论研究和机电设备设计中迫切需要。因为 d 33 * = 1122 pC N k 33 * = 89 <使用此处获得的单域数据计算的[001] c沿与[001] c极化多域PIN-PMN-PT晶体高度吻合,可以得出结论,超高压电性能的物理来源主要来自定向效应。

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