α-Ga 2O3 SINGLE CRYSTAL, METHOD FOR MANUFACTURING THE SAME AND SEMICONDUCTOR ELEMENT USING α-Ga2O3 SINGLE CRYSTAL

摘要

To provide: α-GaOsingle crystal applicable to a semiconductor element; a method for manufacturing the α-GaOsingle crystal; and a semiconductor element using the α-GaOsingle crystal.SOLUTION: The α-GaOsingle crystal is controlled to a carbon concentration of 6×10cmor less. The method for manufacturing α-GaOcomprises the steps of: growing α-GaOon a substrate by a halide vapor phase growth method; removing the substrate; and further growing α-GaOon the α-GaOby the halide vapor phase growth method using the α-GaOobtained in the growing step as a substrate.SELECTED DRAWING: Figure 6