机译:勘误表:“单畴0.26Pb„ In1 / 2Nb1 / 2…O3 –0.46Pb„ Mg1 / 3Nb2 / 3…O3 –0.28PbTiO3单晶的全套材料性能”
Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA2Key Laboratory of Modern Acoustics, Institute of Acoustics, Nanjing University, Nanjing 210093,People’s Republic of China3TRS technologies, Inc., 2820 East College Avenue, State College, Pennsylvania 16801, USA;
机译:Pb(In1 / 2Nb1 / 2)O3-Pb(Mg1 / 3Nb2 / 3)O3-PbTiO3单晶的畴结构和局部转换行为的压电响应显微镜研究
机译:0.29Pb(In1 / 2Nb1 / 2)O3-0.44Pb(Mg1 / 3Nb2 / 3)O3-0.27PbTiO3单晶的电性能和晶体结构的温度依赖性
机译:弛豫铁电Pb(In1 / 2Nb1 / 2)O3-Pb(Mg1 / 3Nb2 / 3)O3-PbTiO3单晶中间相的光学证据
机译:弛豫基Pb(In1 / 2Nb1 / 2)O3-PbTiO3单晶的通量生长和介电性能
机译:溅射沉积外延(1-x)Pb(Mg1 / 3Nb2 / 3)O3-- xPbTiO3薄膜的结构性质关系。
机译:勘误表:完整的单畴0.26Pb(In1 ∕ 2Nb1 ∕ 2)O3-0.46Pb(Mg1 ∕ 3Nb2 ∕ 3)O3-0.28PbTiO3单晶的材料性能 附录。物理来吧96012907(2010)
机译:勘误表:“完整的单畴0.26Pb(In1 ∕ 2Nb1 ∕ 2)O3-0.46Pb(Mg1 ∕ 3Nb2 ∕ 3)O3-0.28PbTiO3单晶的材料性能” [附录。物理来吧96,012907(2010)]
机译:pB(TIO3-ZRO3),偏铌酸铅和铌酸铅和钛酸铅固溶体晶体单晶的生产和介电性能