PECULIARITIES OF THERMOELECTRIC POWER FACTORCHANGE IN n-TiNiSn INTERMETALLIC SEMICONDUCTORHEAVILY DOPED WITH Co IMPURITY

摘要

Temperature dependences of electric resistivity, thermo-EMF, structural characteristics areinvestigated, and electronic density distribution of n-TiNiSn intermetallic semiconductor heavilydoped with Co impurity in the temperature and concentration ranges: T = 80 ± 380 K,x 0.005 ÷ 0.1, is calculated. Conditions for achieving maximum values of thermoelectricpower factor (Z~*) are determined.