首页> 外国专利> Skutterudite thermoelectric semiconductor doped with silicon and tellurium, method for producing the same, and thermoelectric power generation element using the same

Skutterudite thermoelectric semiconductor doped with silicon and tellurium, method for producing the same, and thermoelectric power generation element using the same

机译:掺硅和碲的方钴矿热电半导体,其制造方法以及使用其的热电发电元件

摘要

PROBLEM TO BE SOLVED: To provide a skutterudite thermoelectric conversion semiconductor which has a good thermoelectric performance even in the case of not using a rare earth, Ba or the like which is questionable in terms of stable supply or oxidation resistance.SOLUTION: The above objective is achieved by a Si- and Te-doped skutterudite thermoelectric semiconductor having the following composition: CoSbSiTe(where 0.003x0.25, and 0.025y0.40). The thermoelectric semiconductor can be further enhanced in thermoelectric performance by annealing.SELECTED DRAWING: Figure 6
机译:解决的问题:提供一种方钴矿热电转换半导体,即使在不使用稀土,Ba等的情况下,其也具有良好的热电性能,这在稳定的供电或抗氧化性方面是有问题的。解决方案:上述目的通过具有以下组成的Si和Te掺杂的方钴矿热电半导体可实现CoSbSiTe(其中0.003 <x <0.25,而0.025 <y <0.40)。通过退火可以进一步提高热电半导体的热电性能。选定的图:图6

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