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Tellurium as a high-performance elemental thermoelectric

机译:碲作为高性能元素热电

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摘要

High-efficiency thermoelectric materials require a high conductivity. It is known that a large number of degenerate band valleys offers many conducting channels for improving the conductivity without detrimental effects on the other properties explicitly, and therefore, increases thermoelectric performance. In addition to the strategy of converging different bands, many semiconductors provide an inherent band nestification, equally enabling a large number of effective band valley degeneracy. Here we show as an example that a simple elemental semiconductor, tellurium, exhibits a high thermoelectric figure of merit of unity, not only demonstrating the concept but also filling up the high performance gap from 300 to 700 K for elemental thermoelectrics. The concept used here should be applicable in general for thermoelectrics with similar band features.
机译:高效热电材料需要高电导率。众所周知,大量的简并能带谷提供了许多用于改善电导率的导电通道,而没有明显地影响其他性能,因此,提高了热电性能。除了会聚不同频带的策略外,许多半导体还提供了固有的频带嵌套功能,同样可以实现大量有效的频带谷退化。在此,我们以一个简单的元素半导体碲为例,该元素具有很高的热电统一性,不仅证明了这一概念,而且填补了元素热电器件从300至700 K的高性能缺口。此处使用的概念通常应适用于具有相似频带特征的热电器件。

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