MBE Growth of ZnSe Films on Lattice-Matched In_xGa_(1-x)As Substrates

摘要

Raman scattering of ZnSe layers grown on nearly lattice matched In_xGa_(1-x)As substrates(x =0-0.092) by using molecular beam epitaxy (MBE) have been investigated. The Raman shift ofthe ZnSe longitudinal optical (LO) phonon stays nearly constant while the line width F increaseswith increasing indium molar fraction of the substrates. The results are analyzed based on thetwo-parameter spatial correlation model. The intrinsic line width of ZnSe LO is found to dependstrongly on the spatial correlation length of the substrate.