Polarization Switching Behaviors in Multiferroic BiFeO_3(001) Thin FilmCapacitors under In-plane Magnetic Field

摘要

We investigated the polarization switching behaviors of epitaxial BiFeO_3(001) films under mag-netic fields. The polarization switching behaviors in the BiFeO_3(001) films were well described byusing the Kolmogorov-Avrami-lshibashi model and by assuming Lorentzian distribution functionsof the logarithm of the characteristic switching time. These results were attributed to domain wallpinning effects, probably due to interaction between domain walls and defects or antiferromagneticdomains in the films. Finally, from the magnetic-field dependence of the polarization switchingbehaviors, we found that the ferroelectric and the antiferromagnetic domains in the BiFeO_3(001)films were weakly coupled, leading to a shift in the polarization switching behaviors.