Luminescence Properties of Mn~(2+)-Doped Zn_2SiO_4Thin Films Grown by Using Pulsed Laser Deposition

摘要

Zn_2SiO_4:Mn~(2+)luminescent thin films were grown on Al_2O_3(0001) substrates by using a pulsedlaser deposition technique at substrate temperature of 600 °C under various oxygen pressures of 100,200, 250, 300, 350 and 400 mTorr. The mechanism for the enhanced efficiency of the green emissionfrom the Zn_2SiO_4:Mn~(2+)thin films was investigated for various oxygen pressures. The crystalliza-tion, the surface morphology and the luminescent properties of Zn_2SiO_4:Mn~(2+)thin films are verydependent on the variation in the oxygen pressure. The enhanced luminescence for Zn_2SiO_4:Mn~(2+)thin films at an oxygen pressure of 400 mTorr may result not only from the improved crystallinitybut also from reduced internal reflections caused by rougher surfaces. Also, the luminescent inten-sity and the surface roughness of the films exhibited similar behaviors as functions of the oxygenpressure.