Analysis of the Contact Resistance Effect on Pentacene FET Characteristics and Optical Second Harmonic Generation Measurements

摘要

Based on an analysis of the organic field effect transistor (OFET) as an element of the Maxwell-Wagner effect system, we studied the effect of the contact resistance Re. The charging time to leadsto a decrease in the effective mobility, pen, due to an increase in the response time required forcharge accumulation at the interface. We show that the contact resistance Re can be determinedusing the time-resolved microscopic optical second harmonic generation (TRM-SHG) measurementin combination with the typical FET characteristics because the TRM-SHG measurement directlyprobes carrier motion in the FET channel. With these results we discuss the carrier injection,transport and accumulation mechanisms in detail.