15158A SP6T RF switch based on IBM SOI CMOS technology

摘要

This paper presents the design of single-pole six-throw (SP6T) RF switch with IBM 0.18 μm SOI CMOS technology, which can be widely used in a wireless communication system with its high performance and low cost. The circuit is designed and simulated by using an idea that the total load is divided into six branches and SOI special structures. The insertion loss is less than 0.6 dB, isolation is more than 30 dB, the input power P_(0:1dB) for 0.1 dB compression point is more than 37.5 dBm, IIP3 is more than 70 dBm, the 2nd and the 3rd harmonic compressions are more than 96 dBc, and the control voltage is (+2.46 V, 0, -2.46 V) in the frequency from 0.1 to 2.7 GHz.