Evaluation of the drain–source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method

摘要

The effect of drain–source voltage on AlGaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that AlGaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain–source voltage (V_(DS)) is decreased. Moreover, the relatively low V_(DS) and large drain–source current (I_(DS)) result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low V_(DS) leads to a relatively low electric field, which leads to the decline of the thermal resistance.