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A Physical Unclonable Function Based on Inter-Metal Layer Resistance Variations and an Evaluation of its Temperature and Voltage Stability.

机译:基于金属层间电阻变化的物理不可克隆函数及其温度和电压稳定性评估。

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摘要

Keying material for encryption is stored as digital bistrings in non-volatile memory (NVM) on FPGAs and ASICs in current technologies. However, secrets stored this way are not secure against a determined adversary, who can use probing attacks to steal the secret. Physical Unclonable functions (PUFs) have emerged as an alternative. PUFs leverage random manufacturing variations as the source of entropy for generating random bitstrings, and incorporate an on-chip infrastructure for measuring and digitizing the corresponding variations in key electrical parameters, such as delay or voltage. PUFs are designed to reproduce a bitstring on demand and therefore eliminate the need for on-chip storage.;In this dissertation, I propose a kind of PUF that measures resistance variations in inter-metal layers that define the power grid of the chip and evaluate its temperature and voltage stability. First, I introduce two implementations of a power grid-based PUF (PG-PUF). Then, I analyze the quality of bit strings generated without considering environmental variations from the PG-PUFs that leverage resistance variations in: 1) the power grid metal wires in 60 copies of a 90 nm chip and 2) in the power grid metal wires of 58 copies of a 65 nm chip. Next, I carry out a series of experiments in a set of 63 chips in IBM's 90 nm technology at 9 TV corners, i.e., over all combination of 3 temperatures: -40°C, 25°C and 85°C and 3 voltages: nominal and +/-10% of the nominal supply voltage. The randomness, uniqueness and stability characteristics of bitstrings generated from PG-PUFs are evaluated. The stability of the PG-PUF and an on-chip voltage-to-digital (VDC) are also evaluated at 9 temperature-voltage corners.;I introduce several techniques that have not been previously described, including a mechanism to eliminate voltage trends or 'bias' in the power grid voltage measurements, as well as a voltage threshold, Triple-Module-Redundancy (TMR) and majority voting scheme to identify and exclude unstable bits.
机译:在当前技术中,用于加密的密钥材料以数字双串形式存储在FPGA和ASIC上的非易失性存储器(NVM)中。但是,以这种方式存储的机密对于确定的对手而言是不安全的,后者可以使用探测攻击来窃取机密。物理不可克隆功能(PUF)可以替代。 PUF利用随机制造变化作为产生随机位串的熵源,并结合了片上基础设施,用于测量和数字化关键电参数(例如延迟或电压)中的相应变化。 PUF旨在按需复制位串,因此消除了对片内存储的需求。在本文中,我提出了一种可测量金属间层中的电阻变化的PUF,以定义芯片的电源网格并评估其温度和电压稳定性。首先,我介绍基于电源的PUF(PG-PUF)的两种实现。然后,我分析了在不考虑PG-PUF产生的环境变化的情况下产生的位串的质量,这些环境在以下方面利用了电阻变化:1)60份90 nm芯片的电网金属线,以及2) 58枚65纳米芯片的副本。接下来,我在9个电视角对IBM 90 nm技术中的63个芯片进行了一系列实验,即在-40°C,25°C和85°C这三种温度和三种电压的所有组合下:标称电压和标称电源电压的+/- 10%。评估了由PG-PUF生成的位串的随机性,唯一性和稳定性。 PG-PUF的稳定性和片上电压数字(VDC)也在9个温度-电压拐角处进行了评估。;我介绍了之前未描述的几种技术,包括消除电压趋势或电网电压测量中的“偏差”以及电压阈值,三重模块冗余(TMR)和多数表决方案,以识别和排除不稳定的比特。

著录项

  • 作者

    Ju, Jing.;

  • 作者单位

    The University of New Mexico.;

  • 授予单位 The University of New Mexico.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2013
  • 页码 108 p.
  • 总页数 108
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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