Mathematical modeling of nanoscale MOS capacitance in the presence of depletion and energy quantization in a poly-silicon gate

摘要

A model has been developed to study the effect of depletion and energy quantization at the polysilicon/oxide interface on the behavior of a nanometer scale n-MOSFET. A model of inversion charge density, including the inversion layer quantization using the variation approach in the substrate, has also been produced. Using the exact calculations of the polygate potential under the depletion and quantization conditions, a C–V model has been developed.All the results have been compared with the numerical models reported in existing literature and they show good agreement.