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Plasma immersion ion implantation characteristics with q-nonextensive electron velocity distribution

机译:具有q-非扩展电子速度分布的等离子体浸没离子注入特性

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摘要

The plasma immersion ion implantation process is investigated in the presence of q-nonextensive electrons by using a one-dimensional fluid model. The effect of the nonextensivity parameter, q, on the plasma parameters and sheath dynamics during the implantation process is studied. The results show that the implantation dose can be enhanced in the presence of energetic electrons at the tail of the distribution function. Different parameters of plasma such as sheath thickness, ion velocity and ion density show more change at the larger values of the q-parameter. Furthermore, the results of simulation tend to what is predicted by the Maxwellian electron distribution function (q = 1).
机译:通过使用一维流体模型研究了在q-非扩展电子存在下的等离子体浸没离子注入过程。研究了在植入过程中非延伸性参数q对血浆参数和鞘动力学的影响。结果表明,在分布函数的尾部存在高能电子时,可以提高注入剂量。等离子体的不同参数(例如鞘层厚度,离子速度和离子密度)在q参数的较大值处显示更多变化。此外,模拟结果趋向于通过麦克斯韦电子分布函数(q = 1)进行预测。

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