Capture of carriers by screened charged centres and low-temperature shallow-impurity electric field breakdown in semiconductors

摘要

Free-carrier capture by a screened Coulomb potential in a semiconductor is considered. It is established that with decreasing screening radius the capture cross section decreases drastically, and it goes to zero when r(s) = a(B)*. On the basis of this result, a new mechanism of shallow-impurity electric field breakdown in semiconductors is suggested. [References: 14]