Improved performance of pentacene field-effect transistors using a polyimide gate dieletric layer

摘要

Organic field-effect transistors using pentacene have been fabricated employing polyimide gate dielectric layers. The root-mean square surface roughness of polyimide films is 9 &ANGS;. Devices with thin polyimide films as gate achieved a mobility of 0.16 cm(2) V-1 s(-1), threshold voltage -6.4 V, on-off ratio 104 and subthreshold slope 7.5 dec(-1) with the gate voltage span between 0 and -30 V. The upper limit of interface trap density has been estimated to be 3.9 x 10(12) cm(-2) eV(-1). The mobility is found to be gate bias dependent.