Structure studies of C3N4 thin films prepared by microwave plasma chemical vapour deposition

摘要

Crystalline carbon nitride films have been synthesized on Si(100) substrates by a microwave plasma chemical vapour deposition technique, using a gas mixture containing nitrogen and methane at various ratios as precursors. Scanning electron microscopy shows that the films consisted of hexagonal crystalline rods, which are about 1-2 mum long and about 0.4 mum wide. X-ray diffraction and transition electron microscopy indicate that the films are mainly composed of alpha- and beta -C3N4, and these results match more closely with the alpha -C3N4 than with the beta -C3N4 phase. Fourier transform infrared absorption spectra of carbon nitride films support the existence of alpha- and beta -C3N4. [References: 9]