Single electron transport in resonant tunnelling diodes laterally confined by ion implantation

摘要

In order to investigate single electron transport the lateral dimensions of a resonant tunnelling diode have been confined to the submicrometre range by oxygen ion implantation. Depending on the temperature sequence used in the annealing step subsequent to the implantation, these small area resonant tunnelling diodes in the single electron regime either show clearly developed staircase-like features as a consequence of single electron tunnelling through discrete zero-dimensional states or a sequence of current peaks due to single electron tunnelling through coupled zero-dimensional states. Magnetotransport measurements suggest impurity states related to implantation defects as an origin of the zero-dimensional states.