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首页> 外文期刊>Journal of Physics, B. Atomic, Molecular and Optical Physics: An Institute of Physics Journal >Blackbody-induced decay, excitation and ionization rates for Rydberg states in hydrogen and helium atoms
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Blackbody-induced decay, excitation and ionization rates for Rydberg states in hydrogen and helium atoms

机译:黑体引起的氢原子和氦原子里德堡态的衰变,激发和电离速率

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New features of the blackbody-induced radiation processes on Rydberg atoms were discovered on the basis of numerical data for the blackbody-induced decay P~d_(nl)(T), excitation P~e_(nl)(T) and ionization P~(ion)_(nl)(T) rates of nS, nP and nD Rydberg states calculated together with the spontaneous decay rates P~(sp)_(nl) in neutral hydrogen, and singlet and triplet helium atoms for some values of the principal quantum number n from 10 to 500 at temperatures from T = 100 K to 2000 K. The fractional rates R~(d(e, ion))_(nl)(T) = P_(nl)~(d(e, ion))(T)/P~(sp)_(nl) equal to the ratio of the induced decay (excitation, ionization) rates to the rate of spontaneous decay were determined as functions of T and n in every series of states with a given angular momentum l = 0, 1, 2. The calculated data reveal an essential difference between the asymptotic dependence of the ionization rate P~(ion)_(nl)(T) and the rates of decay and excitation P ~(d(e))_(nl)(T)∝T~2. The departures appear in each Rydberg series for n > 100 and introduce appreciable corrections to the formula of Cooke and Gallagher. Two different approximation formulae are proposed on the basis of the numerical data, one for R~(d(e))_(nl)(T) and another one for R~(ion)_(nl)(T), which reproduce the calculated values in wide ranges of principal quantum number from n = 10 to 1000 and temperatures between T = 100 K and T = 2000 K with an accuracy of 2% or better. Modified Fues' model potential approach was used for calculating matrix elements of bound-bound and bound-free radiation transitions in helium.
机译:根据黑体引起的衰变P〜d_(nl)(T),激发P〜e_(nl)(T)和电离P〜的数值数据,发现了黑体对Rydberg原子的辐射过程的新特征。分别计算nS,nP和nD Rydberg态的(ion)_(nl)(T)比率以及中性氢,单重态和三重态氦原子的自发衰变率P〜(sp)_(nl)在T = 100 K至2000 K的温度下从10到500的主量子数n。分数比率R〜(d(e,离子))_(nl)(T)= P_(nl)〜(d(e,离子))(T)/ P〜(sp)_(nl)等于诱导衰变(激发,电离)速率与自发衰变速率之比,并确定为在每个状态序列中T和n的函数给定角动量l = 0,1,2。计算的数据揭示了电离速率P〜(ion)_(nl)(T)的渐近依赖性与衰减速率和激励速率P〜(d)之间的本质差异。 (e))_(nl)(T)∝T / n〜2。在n> 100的每个Rydberg级数中出现偏差,并且对Cooke和Gallagher的公式进行了明显的修正。在数值数据的基础上,提出了两种不同的近似公式,一种近似为R〜(d(e))_(nl)(T),另一种近似为R〜(ion)_(nl)(T)。在从n = 10到1000的主量子数的宽范围内以及在T = 100 K和T = 2000 K之间的温度范围内的计算值,精度为2%或更高。改进的Fues模型势能方法用于计算氦中束缚和无束缚辐射跃迁的矩阵元素。

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