Comparison of Ion Implantation Resistance between Commercial KrF and ArF Photoresists

摘要

Due to the shrinkage of the device, the need for the use of ArF lithography on the ion implantation(IIP) layers is increasing. Though the experience on the ArF lithography is sufficient, the focus was on the etching layer. The ion implantation block layer has been performed by KrF and i-line lithography. One of the major concerns of the ArF usage on the block layer is the resistance of the photoresist to the ion implantation. It is well known that the ArF photoresist suffers from the SEM shrinkage and insufficient etching resistance. Also, several papers have reported ion implantation characteristics of the photoresist(PR) patterns [1-3]. However, these papers concentrate on the other applications using ion implantation as the pre-processing technology [4-6]. In this paper, the requirements for the block layer have been assessed and the comparison of the ion implantation shrinkage of the commercial KrF and ArF photoresists has been described.