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首页> 外文期刊>Journal of Nuclear Materials: Materials Aspects of Fission and Fusion >The influences of irradiation temperature and helium production on the dimensional stability of silicon carbide
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The influences of irradiation temperature and helium production on the dimensional stability of silicon carbide

机译:辐照温度和产氦量对碳化硅尺寸稳定性的影响

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摘要

Isotropic volume expansion, or swelling, is a well-known irradiation-induced phenomenon for silicon carbide (SiC), as observed after neutron irradiation. In this work, the influences of irradiation temperature and helium production on fluence-dependent swelling behavior in cubic SiC were characterized following the establishment of an experimental technique to determine ion-irradiation-induced swelling within an accuracy of <0.02%. Saturation swelling behavior was confirmed at temperature >200 degreesC. Measured swelling values yielded approximately at the lower edge of neutron-induced swelling data band at T similar to<600 degreesC. A fusion-relevant helium-to-dpa condition significantly enhanced swelling at 400
机译:各向同性的体积膨胀或溶胀是众所周知的碳化硅(SiC)的辐照诱导现象,如在中子辐照后观察到的。在这项工作中,建立了一种实验技术,确定了离子辐照引起的溶胀,精度在<0.02%之内,从而表征了辐射温度和氦气的产生对立方SiC中与注量有关的溶胀行为的影响。在> 200℃的温度下确认了饱和溶胀行为。测得的溶胀值大约在中子诱发的溶胀数据带的下边缘处产生,其T值<600摄氏度。熔融相关的氦气到dpa条件在400 <类似于T <相似于800摄氏度时显着增强了溶胀。有和没有氦共注入的饱和溶胀的温度依赖性表明缺陷行为在800到1000摄氏度之间短暂出现。根据低剂量溶胀数据,在333 K下重离子辐照SiC的残存缺陷产生效率非常粗略地估计为20%。 (C)2002 Elsevier Science B.V.保留所有权利。 [参考:17]

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