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首页> 外文期刊>Journal of optoelectronics and advanced materials >Comparison of new and old generations of the phase change memory chalcogenide materials and devices
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Comparison of new and old generations of the phase change memory chalcogenide materials and devices

机译:新一代相变记忆硫属化物材料和器件的比较

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摘要

A comparison of the two generations of the phase change memory cells was made. Advantages and disadvantages of the new generation of the phase change memory were formulated from the point of view of an electronic-thermal theory. The phase change memory technology was compared with the flash memory technology.
机译:比较了两代相变存储单元。从电子热学理论的角度阐述了新一代相变存储器的优缺点。将相变存储技术与闪存技术进行了比较。

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