首页> 外文期刊>Journal of Micromechanics and Microengineering >Fabrication of nanopillar forests with high infrared absorptance based on rough poly-Si and spacer technology
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Fabrication of nanopillar forests with high infrared absorptance based on rough poly-Si and spacer technology

机译:基于粗糙多晶硅和隔片技术的高红外吸收纳米柱林的制作

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Nanopillar forests with high infrared (IR) absorptance are fabricated based on a highly flexible, controllable and micro-fabrication compatible parallel approach. The key technique of the approach is using rough surfaces of poly-Si films as support structures in spacer technology. In a wavelength region of 1.5-5 μm, IR absorptance of the large-area nanopillar forests reaches a minimum of 95%, which is much higher than that of poly-Si films and Si_3N_4-based IR absorbers. As the approach is compatible with conventional micro-fabrication process, the nanopillar forests can be photo-patterned and generated on microstructures or devices. It is expected that the nanopillar forests can be employed as absorbers in micro-electro-mechanical system IR sensors to improve performance.
机译:具有高度红外(IR)吸收率的纳米柱森林是基于高度灵活,可控且与微加工兼容的并行方法制造的。该方法的关键技术是在间隔技术中使用多晶硅膜的粗糙表面作为支撑结构。在1.5-5μm的波长范围内,大面积纳米柱状森林的IR吸收率最低达到95%,远高于多晶硅膜和基于Si_3N_4的IR吸收剂。由于该方法与传统的微细加工工艺兼容,因此可以对纳米柱林进行光图案化,并在微结构或装置上生成。预期纳米柱林可以用作微机电系统红外传感器中的吸收剂,以提高性能。

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