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Application of multi-mask layers for high aspect ratio soft mold imprint

机译:多层掩膜在高纵横比软模压印中的应用

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Soft mold imprinting has been widely used to improve quality and uniformity in large area nano-imprint processes because of its flexibility. However, the aspect ratio of soft mold imprinting is limited because of its physical properties. In this paper, a multi-mask layers transfer process was demonstrated to realize a high aspect ratio in the soft mold imprint process. In this process, a thin hard mask was used as an intermediate mask for a high aspect ratio mask layer fabrication. Based on this, a 60 nm line width gratings mask, whose aspect ratio is higher than 4, was fabricated; we also realized a uniform photonic crystal (PC) pattern on large and rough gallium nitride (GaN) epitaxial wafers.
机译:由于其柔韧性,软模压印已被广泛用于提高大面积纳米压印工艺的质量和均匀性。但是,软模压印的纵横比由于其物理特性而受到限制。在本文中,演示了多掩模层转移过程,以在软模压印过程中实现高纵横比。在该工艺中,薄的硬掩模用作高纵横比掩模层制造的中间掩模。基于此,制作出长宽比大于4的60nm线宽光栅掩模。我们还在大型和粗糙的氮化镓(GaN)外延晶片上实现了均匀的光子晶体(PC)图案。

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