Fabrication process for CMUT arrays with polysilicon electrodes, nanometre precision cavity gaps and through-silicon vias

摘要

Capacitive micromachined ultrasound transducers (CMUTs) can be used to realize miniature ultrasound probes. Through-silicon vias (TSVs) allow for close integration of the CMUT and read-out electronics. A fabrication process enabling the realization of a CMUT array with TSVs is being developed. The integrated process requires the formation of highly doped polysilicon electrodes with low surface roughness. A process for polysilicon film deposition, doping, CMP, RIE and thermal annealing that resulted in a film with sheet resistance of 4.0 Ω/□ and a surface roughness of 1 nm rms has been developed. The surface roughness of the polysilicon film was found to increase with higher phosphorus concentrations. The surface roughness also increased when oxygen was present in the thermal annealing ambient. The RIE process for etching CMUT cavities in the doped polysilicon gave a mean etch depth of 59.2 ± 3.9 nm and a uniformity across the wafer ranging from 1.0 to 4.7%. The two presented processes are key processes that enable the fabrication of CMUT arrays suitable for applications in for instance intravascular cardiology and gastrointestinal imaging.