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首页> 外文期刊>Journal of Micromechanics and Microengineering >Q-FACTOR DEPENDENCE OF ONE-PORT ENCAPSULATED POLYSILICON RESONATOR ON REACTIVE SEALING PRESSURE
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Q-FACTOR DEPENDENCE OF ONE-PORT ENCAPSULATED POLYSILICON RESONATOR ON REACTIVE SEALING PRESSURE

机译:单端口包封多晶硅谐振器的Q系数与反应密封压力的关系

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Micromachined encapsulated polysilicon resonators have been fabricated in different reactive sealing pressure, 200, 50 and 20 mTorr, in order to investigate the dependence of the Q-factors on the sealing pressure. Q-factors as high as 2700 have been measured. The experimental results show that the Q-factors of one-port encapsulated resonators are proportional to 1/p and the resonant frequency is independent of the sealing pressure. However, the measured Q-factors are more than two orders of magnitude lower than theoretical prediction. [References: 10]
机译:为了研究Q因子对密封压力的依赖性,已经在200、50和20mTorr的不同反应密封压力下制造了微加工的封装的多晶硅谐振器。已测量出高达2700的Q因子。实验结果表明,单端口封装谐振器的Q因子与1 / p成正比,谐振频率与密封压力无关。但是,测得的Q因子比理论预测低两个数量级。 [参考:10]

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