Fabrication of TiSi_2 Using Microwave Hydrogen Plasma Annealing

摘要

A new method, microwave hydrogen plasma annealing of sputter-deposited titanium films on an Si (111) substrate, was used to fabricate TiSi2 films. The films were characterized by x-ray diffraction, Auger electron spectroscopy, sputter depth profiling, and four-point probe resistivity measurements. Polycrys-talline TiSi_2, dominated by components with (040) orientation, was grown at the annealing temperature of 800 deg C. The microwave hydrogen plasma was considered not only to provide the heat for the solid-phase reaction, but also to promote the solid-phase reaction by enhancing atom mobility and diffusion.