A ferroelectric tunnel junction based on the piezoelectric effect for non-volatile nanoferroelectric devices

摘要

A ferroelectric tunnel junction based on the piezoelectric effect mechanism, which not only overcomes the drawbacks concerning retention time and polarization switching in the ferroelectric tunnel junction based on the electrostatic effect, but also suggests a new design concept for compact ferroelectric tunnel junction solid-state memories for next-generation information technology devices.