Nanofabrication of TaS2 conducting layers nanopatterned with Ta2O5 insulating regions via AFM

摘要

It is demonstrated how local oxidation nanolithography performed with an atomic force microscope (AFM-LON) may be successfully employed for the nanopatterning of insulating regions of Ta2O5 on TaS2 ultrathin metallic layers. This provides a simple approach for the fabrication of electronic devices, such as single-electron transistors, at the nanoscale.