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Tunable ferromagnetic behavior in Cr doped ZnO nanorod arrays through defect engineering

机译:通过缺陷工程在Cr掺杂的ZnO纳米棒阵列中的可调谐铁磁行为

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Zn vacancy (V_(Zn)) effects on the microstructure and ferromagnetism (FM) of Zn_(0.94)Cr_(0.06)O nanorod arrays have been investigated using a combination of experimental measurements and first-principles calculations. The well-aligned Zn_(0.94)Cr_(0.60)O nanorod arrays were synthesized by radio frequency magnetron sputtering deposition at different substrate temperatures. The Cr K-edge X-ray absorption near-edge structure (XANES) and X-ray photoelectron spectroscopy results revealed that the Cr~(3+) ions were located at the substitutional Zn sites. Moreover, the O K-edge XANES analysis and resonance Raman scattering indicated the existence of numerous V_(Zn). The stable FM observed at room temperature was an intrinsic property of Zn_(0.94)Cr_(0.06)O nanorod arrays. With increasing substrate temperature, improved crystallinity along with the increase in V_(Zn) was observed in Zn_(0.94)Cr_(0.06)O nanorod arrays, and an enhancement of magnetic moment in the samples came forth. First-principles calculations revealed that the enhanced magnetism mainly comes from the unsaturated 2p orbitals of the surrounding O atoms, which is caused by the presence of the Zn vacancy. This research represents a novel promising route for tuning the magnetic behavior of nano-dilute magnetic semiconductor systems via V_(Zn) changes.
机译:锌空位(V_(Zn))对Zn_(0.94)Cr_(0.06)O纳米棒阵列的微观结构和铁磁性(FM)的影响已结合实验测量和第一性原理计算进行了研究。通过射频磁控溅射在不同衬底温度下合成了取向良好的Zn_(0.94)Cr_(0.60)O纳米棒阵列。 Cr K边缘X射线吸收近边缘结构(XANES)和X射线光电子能谱分析结果表明Cr〜(3+)离子位于置换Zn位点。此外,O K边缘XANES分析和共振拉曼散射表明存在大量V_(Zn)。在室温下观察到的稳定的FM是Zn_(0.94)Cr_(0.06)O纳米棒阵列的固有特性。随着衬底温度的升高,在Zn_(0.94)Cr_(0.06)O纳米棒阵列中观察到结晶度随V_(Zn)的增加而改善,并且样品中的磁矩也随之增加。第一性原理计算表明,增强的磁性主要来自周围O原子的不饱和2p轨道,这是由于锌空位的存在引起的。这项研究代表了一种新颖的有前途的途径,可以通过V_(Zn)变化来调节纳米稀磁半导体系统的磁行为。

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