The magnetic and electrical properties of Mn-doped ZnO and (Al, Mn) co-doped ZnO nanorods synthesized by the magnetron sputtering method were investigated in this paper.Structural analysis demonstrated that the doped Al and Mn atoms occupied Zn sites and did not change the wurtzite structure of the ZnO nanorods.Magnetic measurements indicated that (Al, Mn) co-doped ZnO nanorods clearly showed room-temperature ferromagnetism with saturation magnetizations of about 0.033 μB/Mn atom.Compared with Mn-doped ZnO nanorods, the electrical resistivity of (Al, Mn) co-doped ZnO nanorods decreased over four orders of magnitude.These results suggested that (Al, Mn) co-doped ZnO diluted magnetic semiconductor nanorods may be applied as an efficient source of polarized spins for injection into devices because of their low resistance and high carrier concentration.%采用磁控溅射方法制备了锰掺杂氧化锌和铝、锰共掺杂氧化锌纳米棒阵列并详细研究了它们的电学和磁学特性.微结构测试的结果表明,掺杂后的氧化锌纳米棒阵列保持了纤锌矿晶体结构,掺杂锰离子和铝离子占据了晶体中锌离子的位置实现了替位式掺杂.磁学性质测试结果表明铝、锰共掺杂氧化锌纳米棒在室温下具有明显的铁磁性,饱和磁矩为0.33 μB/Mn atom,是居里温度高于室温的一维稀磁半导体材料.电学性质测试结果表明铝的共掺杂可以使得锰掺杂氧化锌纳米棒的电阻率降低4个数量级,使得铝、锰共掺杂氧化锌纳米棒有可能在未来自旋电子器件中作为高效自旋注入元器件得到广泛应用.
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