Synthesis of Al-doped ZnO Nanorod Arrays on Al-doped ZnO Seed Layer and Their Properties

摘要

Aluminium (Al)-doped zinc oxide (ZnO) nanorod arrays have been synthesized on a glass substrate, where the seed layer is Al-doped ZnO thin film as well, using the sonicated sol-gel immersion method. The nanorods structure was synthesized by preparing a solution 0.0026 M of zinc nitrate hexahydrate (Zn(NO_3)_2·6H_2O, 98%, Systerm) as a precursor, 0.1 M hexamethylenetetramine (HMT, C_6H_(12)N_4, 99%, Aldrich) as a stabilizer and 0.001M aluminum nitrate nonahydrate (Al(NO_3)_3·9H_2O, 98%, Analar) as a dopant, dissolved in deionized (DI) water. The resistivity is 7626.72 Ωcm and the conductivity is 1.31 × 10~(-4) Scm~(-1). The peak of UV emission of the sample is at 380 nm.