Disordered layered p-type bismuth telluride was obtained by high pressure (1 GPa) and high strain deformation along the c-axis direction of commercially available single crystals. After initial deformation the p-type bismuth telluride flakes were subsequently fully densified by cold pressing (800 MPa at room temperature). As a result of the severe plastic deformation, the samples showed highly anisotropic electrical and thermal conductivities. In particular, the thermal conductivity measured along the pressing direction was as low as 0.34 W m~(-1) K~(-1), which is one of the lowest values reported for fully dense p-type bismuth telluride. The full set of thermoelectric properties of the disordered bismuth antimony telluride is critically discussed.
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机译：通过高压（1 GPa）和沿商购单晶的c轴方向的高应变变形获得了无序的分层p型碲化铋。初始变形后，随后通过冷压（室温下为800 MPa）将p型碲化铋薄片完全致密。由于严重的塑性变形，样品显示出高度各向异性的导电性和导热性。特别是，沿压制方向测得的热导率低至0.34 W m〜（-1）K〜（-1），这是报道的完全致密的p型碲化铋的最低值之一。严格讨论了无序铋锑碲的全部热电性能。
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