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In situ synthesis of semiconductor nanocrystals at the surface of tubular J-aggregates

机译:管状J聚集体表面的半导体纳米晶体的原位合成

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Hybrid nanostructures consisting of dye molecules and semiconducting nanocrystals are currently much investigated because they can benefit from the strong absorption of organic dyes and the chemical stability of inorganic components, a combination of properties that is promising for various optoelectronic applications. Here, we report an in situ synthesis method to design hybrid nanotubes by growing metal sulfide (MeS) nanocrystals at the surface of tubular J-aggregates of amphiphilic carbocyanine dyes. In this method, metal cations (Me~(2+) = Cd~(2+), Zn~(2+), and Ni~(2+)) are enriched at the negatively charged surface of J-aggregates via electrostatic attraction, giving rise to a diffuse Helmholtz layer. Subsequent addition of thioacetamide and ammonium hydroxide leads to the formation of a dense layer of MeS nanocrystals exclusively close to or at the surface of J-aggregates. Typically, a shell of CdS nanocrystals (size ~ 3 nm) is formed at the surface of tubular J-aggregates without significantly affecting the aggregate morphology. The crystal structure is analyzed by electron diffraction revealing a sphalerite structure. The coverage of CdS nanocrystals on J-aggregates can be tuned by varying the concentration of the sulphur source. Efficient energy transfer from CdS nanocrystals to J-aggregates results in the quenching of the CdS photoluminescence. Structurally and morphologically similar hybrid systems of tubular J-aggregates and semiconductor nanocrystals (e.g., ZnS and NiS) are synthesized by analog chemical reactions.
机译:由染料分子和半导体纳米晶体组成的杂化纳米结构目前得到了广泛研究,因为它们可以受益于有机染料的强吸收性和无机组分的化学稳定性,这些特性的组合对各种光电应用都很有希望。在这里,我们报告了一种原位合成方法,通过在两亲性碳菁染料的管状J聚集体表面生长金属硫化物(MeS)纳米晶体来设计杂化纳米管。在这种方法中,金属阳离子(Me〜(2+)= Cd〜(2 +),Zn〜(2+)和Ni〜(2+))通过静电吸引富集在J聚集体的带负电荷的表面,产生一个扩散的亥姆霍兹层。随后添加硫代乙酰胺和氢氧化铵导致形成的MeS纳米晶体致密层仅靠近J聚集体或在其表面形成。通常,在管状J聚集体的表面形成CdS纳米晶体(尺寸约3 nm)的壳,而不会显着影响聚集体的形态。通过电子衍射分析晶体结构,显示闪锌矿结构。可以通过改变硫源的浓度来调整CdS纳米晶体在J聚集体上的覆盖率。从CdS纳米晶体到J聚集体的有效能量转移导致CdS光致发光的猝灭。管状J聚集体与半导体纳米晶体(例如ZnS和NiS)的结构和形态相似的杂化系统是通过模拟化学反应合成的。

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