Electrical and Optical Properties of Cu2ZnSnS4 Thin Film Prepared by Sol Gel Method without Sulfurization

摘要

Cu2ZnSnS4 is a technological material with a suitable optical band gap of 1.5 eV and a large absorption coefficient of over 10(4) cm(-1) for low-cost thin film solar cells. We have grown the Cu-2 ZnSnS4 film by sol gel method on glass substrate. The crystal structure and morphology properties of the film were investigated by X-Ray diffraction technique and scanning electron microcopy. The SEM image indicates that the Cu2ZnSnS4 film is formed from nanoparticles like prism. The optical band gap E-g of the Cu2ZnSnS4 film was determined using the optical absorption method and it was found to be 1.51 eV. The increase in electrical conductivity of the film with increase in temperature confirms that the Cu2ZnSnS4 film exhibits the semiconductor behavior. The obtained results suggest that Cu2ZnSnS4 thin film can be prepared by sol gel method without sulfurization.