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首页> 外文期刊>Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic >Effect of Al doping on structural, morphological, optical, and electrical properties of Cu2ZnSnS4 thin films prepared by sol-gel spin coating
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Effect of Al doping on structural, morphological, optical, and electrical properties of Cu2ZnSnS4 thin films prepared by sol-gel spin coating

机译:Al掺杂对溶胶 - 凝胶旋转涂层制备的Cu2ZNSS4薄膜结构,形态学,光学和电性能的影响

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Preparation of aluminum (Al) -free and Al- doped copper zinc tin sulfide (CZTS) thin films have been reported using low-cost, low-temperature (280 degrees C) sol-gel spin coating method without sulfurization. Effect of Al doping on structural, morphological, optical and electrical properties of the films have been presented. It has been found that both Al-free CZTS thin film sample (S0) and Al-doped CZTS thin film samples with 1% (S1), 3% (S2) and 4% (S3) show kestrite, polycrystalline tetragonal structure using X-ray diffraction and confirmed with Raman spectroscopy measurements. Scanning electron microscope (SEM) images show that the undoped sample has 3D architecture structure with porous flake-like surface, while the doped samples are smooth and with less porous structure. Energy dispersive spectroscopy results have been presented for reporting chemical composition of the constituting elements. Effect of annealing at two different temperatures of 350 degrees C and 400 degrees C for further enhancement of film crystallinity has also been presented. Interference fringes have been observed in the reflectance spectra, which indicate the good optical quality of the films. Optical properties of undoped and Al-doped samples have been reported. It has been found that decrease in the optical bandgap energy from 1.89 eV (undoped sample) to 1.73 eV at 1% Al doping, 1.69 eV at 3% Al doping, and 1.68 eV at 4% Al doping occurs, which is desirable for solar cell applications. At 350 degrees C, the resistivity of 3% Al doped film (S2) has the lowest value, 9 x 10(-2) Omega cm, compared to the other samples. On the other hand, at 280 degrees C, the resistivity of the film increases from 1.14 x 10(-1) Omega cm for the undoped film, to 1.45 Omega cm for 1% Al doping, 0.877 for 2% Al doping, 0.29 Omega cm for 3% Al, and 2 Omega cm for 4% Al doped sample. (C) 2018 Elsevier GmbH. All rights reserved.
机译:使用低成本,低温(280℃)溶胶 - 凝胶旋转涂布法,铝(Al) - 免于铝(Al)的制备和掺杂的铜锌锌锌锌硫化物(CZTS)薄膜,无需硫化。介绍了Al掺杂对薄膜结构,形态,光学和电性能的影响。已经发现,Al-F1薄膜薄膜样品(S0)和Al掺杂的CZTS薄膜样品,其中1%(S1),3%(S2)和4%(S3)显示肝酸盐,使用X.的多晶间四角结构-Ray衍射并用拉曼光谱测量证实。扫描电子显微镜(SEM)图像显示未掺杂的样品具有3D架构结构,具有多孔薄片状表面,而掺杂的样品是光滑的,结构较少。已经提出了能量分散光谱结果,用于报告构成元素的化学成分。还介绍了在350℃和400℃的两个不同温度下退火的影响,以进一步增强膜结晶度。已经在反射光谱中观察到干涉条纹,这表明薄膜的良好光学质量。已经报道了未掺杂的和Al掺杂样品的光学性质。已经发现,从1.89eV(未掺杂样品)的光学带隙能量下降到1.73eV,在1%Al掺杂,1.69eV,3%Al掺杂,1.68eV,发生在4%掺杂的1.68eV,这对于太阳能来说是理想的细胞应用。在350℃下,与其他样品相比,3%Al掺杂膜(S2)的电阻率具有最低值,9×10(-2)ωcm。另一方面,在280℃下,膜的电阻率从1.14×10(-1)ωcm增加到未掺杂的薄膜,为1.45ωcm,1%eA掺杂,0.877,2%掺杂,0.29ω对于4%Al掺杂样品,3%Al的Cm和2个ωcm。 (c)2018年Elsevier GmbH。版权所有。

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