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首页> 外文期刊>Journal of nanoscience and nanotechnology >Ag-Catalyzed Growth of Ge Nanostructures via the Thermal Evaporation of Ge Powder
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Ag-Catalyzed Growth of Ge Nanostructures via the Thermal Evaporation of Ge Powder

机译:银粉热蒸发的银催化生长锗纳米结构

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摘要

The Ag-catalyzed growth of straight Ge nanowires (GeNWs), serrated Ge nanobelts (GeNBs), and hexagonal Ge nanotowers (GeNTs) by thermal evaporation of Ge powder at 950℃ in Ar was studied. The growth of GeNWs and GeNBs at 550-600℃ followed the top-growth mode via the vapor-solid-solid process, while that of GeNTs at 700-750℃ followed the bottom-growth mode via the vapor-liquid-solid process. This result shows that the growth mode of Ge nanostructures catalyzed by Ag nanoparticles is temperature-dependent. The larger size of AgGe droplets assembled at high temperatures is beneficial to the growth of GeNTs with the bottom-growth mode. In addition, the growth mechanisms of Ge nanostructures are discussed.
机译:研究了在950℃Ar中热蒸发Ge粉后,Ag催化生长的纯Ge纳米线(GeNWs),锯齿状Ge纳米带(GeNBs)和六角形Ge纳米塔(GeNTs)的生长。在550-600℃时GeNWs和GeNBs的生长遵循气固固结的顶增长模式,而在700-750℃时GeNTs通过气液固结的增长遵循底部增长模式。该结果表明,Ag纳米颗粒催化的Ge纳米结构的生长模式是温度依赖性的。在高温下组装的较大尺寸的AgGe液滴有利于底部生长模式下GeNT的生长。此外,讨论了Ge纳米结构的生长机理。

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