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Growth of Indium Oxide Nanostructures by Thermal Evaporation

机译:热蒸发氧化铟纳米结构的生长

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In this work, we report the synthesis and characterization of indium oxide nanostructures grown by thermal evaporation on silicon substrates with and without the presence of gold catalysts in the temperature range of 600 to 900°C. These structures are in the form of nanobelts and nanorods with dimensions from a few micrometers in length and less than 200 nm in width. The growth processes involved in the formation of the nanostructures are the vapor-solid (VS) and vapor-liquid-solid (VLS) mechanisms where the former is responsible for growth when Au catalyst is used. Scanning Electron Microscopy was employed to characterize the morphology of nanostructures.
机译:在这项工作中,我们报告了通过在600至900℃的温度范围内的金催化剂存在的硅基衬底上产生的热蒸发氧化铟纳米结构的合成和表征。 这些结构是纳米螺纹和纳米棒的形式,其尺寸在长度的几微米和小于200nm的宽度。 纳米结构形成的生长过程是蒸汽固体(Vs)和蒸汽 - 液体 - 固体(VLS)机制,当使用Au催化剂时,前者对生长负责。 使用扫描电子显微镜表征纳米结构的形态。

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