Advances in the Modeling of Single Electron Transistors for the Design of Integrated Circuit

摘要

Single electron transistor (SET) has become a promising candidate for the key device of logic circuit in the near future. The advances of recent 5 years in the modeling of SETs are reviewed for the simulation of SET/hybrid CMOS-SET integrated circuit. Three dominating SET models, Monte Carlo model, master equation model and macro model, are analyzed, tested and compared on their principles, characteristics, applicability and development trend. The Monte Carlo model is suitable for SET structure research and simulation of small scale SET circuit, while the analytical model based on combination with master equation and macro model is suitable to simulate the SET circuit at balanceable efficiency and accuracy.