Self Assembled Growth of GaSb Nano Triangles on GaN/Sapphire Substrate

摘要

Self-assembled GaSb nano structures were grown on GaN/sapphire. GaSb nano triangles as well as quantum dots were obtained under controlled growth conditions. Nano triangles were grown at 580℃ due to the growth rate anisotropy among the (1100) planes. The size of nano triangle was 87 nm in width, 5 nm in height, and the density was 5 × 10~8 cm~(-2), when the growth time was 30 s. This is the first report on the self assembled growth of nano triangles within a highly strained material system.