GaN Method for controlling of growth of self-assembled Au nanoparticles on GaN

摘要

According to an aspect of the invention, the preparation step the GaN substrate; Gold deposition steps that gold is deposited on the prepared GaN substrate; And annealing temperature cracked growth phase gold nanoparticles are nanoparticles is spontaneous formation deposited on the GaN substrate through the heat treatment for 400 ~ 300 ± 30 seconds at 800 ℃; Including, but, by controlling the annealing temperature, the spontaneous-spontaneous growth of the gold nanoparticle is formed on the GaN to a shape, characterized in that for controlling the size and density of the gold nanoparticles formed control method is provided.;