Improvement of Heavy Dopant Doped Ni-Silicide Using Ytterbium Interlayer for Nano-Scale MOSFETs with an Ultra Shallow Junction

摘要

In this paper, a novel Ni silicide with Yb interlayer (Yb/Ni/TiN) on a boron cluster (B_(18)H_(22)) implanted source/drain junction is proposed for the first time, and its thermal stability characteristics are analyzed in depth. The proposed Ni-silicide exhibits a wider RTP temperature window for uniform sheet resistance, surface roughness and better thermal stability than the conventional structure (Ni/TiN). In addition, the cross-sectional profile of the proposed Ni-silicide showed less agglomeration despite the high temperature post-silicidation annealing, and it can be said that the proposed structure was little dependence on the temperature post-silicidation annealing. The improvement of Ni silicide properties is analyzed and found to be due to the formation of the rare earth metal - NiSi (YbNi_2Si_2), whose peaks were confirmed by XRD. The junction leakage current of the p+-n junction with Yb/Ni/TiN and B_(18)H_(22) implantation is smaller than that with Ni/TiN by almost one order of magnitude as well as improving the thermal stability of ultra shallow junction.