Well-aligned heterojunctions of carbon nanotubes and silicon nanowires synthesized by chemical vapor deposition

摘要

Carbon nanotubes (CNTs) have attracted much interest since their discovery owing to their high mechanical strength and electrical properties [1-3]. They can be expected to provide a basis for a future generation of nanoscale devices. However, the electrical properties of empty CNTs are extremely sensitive to their structure and the existence of defects, which imposes great difficulty for using unfilled nanotubes in electronic device applications. Theoretical studies suggest that the introduction of foreign material into the inner cavities of CNTs may enhance or modify the properties of the resulting composites materials [4,5].