Growth of well-aligned carbon nanotubes on a large area of Co-Ni co-deposited silicon oxide substrate by themal chemical vapor deposition

摘要

We have grown vertically well-aligned multiwalled multiwalled carbon nanotubes (CNT) on a large area of cobalt-nickel (Co-Ni)co-deposited silicon oxide substrate by thermal vapor deposition using C_2H_2 gas,at 950deg C.The diameter of CNTs is in the range of 50-120 nm and the length is about 130 #mu#m,The grown CNTs have a bamboo structure and closd tip with no catalytic particles inside.As the particle size of Co-Ni catalyst decreases,the vertical alignment is enhanced.The CNTs exhibits a low turn-on voltage of 0.8 V/#mu# with an emission current density of 0.1 #mu#A cm~(-2).