Formation mechanism of a new emission band in Si-ion-implanted GaAs after rapid thermal annealing

摘要

The study of impurity doping by ion implantation in GaAs has been of great interest due to applications in metal-semiconductor field-effect transistors and integrated devices [1,2]. Recently, Lee et al. reported on a thermally stimulated current and a computer simulation of Si-ion-implanted GaAs [3, 4].