Structural properties of CuGaTe_2 thin films

摘要

The chalcopyrite compounds of I-III-VI2 group are the ternary analogues of II-VI binary compounds of cubic zincblende structure [1]. Over recent years the physical properties of I-III-VI2 semiconductors have been studied extensively, but less information is available on the teilurides of this group [2-4], CuGaTe2 is one such material with a direct band gap of about 1.25 eVand material properties suitable for its use as an absorber for solar energy conversion [5]. Although many research groups have studied the physical properties of CuGaTe2 crystals, reported data on thin films of this compound is very meagre [6-8]. Hence, in the present paper we report on the structural behaviour of CuGaTe2 thin films by suitably controlling the substrate temperature and deposition rate.